Experiment- 1 1. q�q�ْ�����H[�:o�p;Z������%sKoK��!�zE�moq��lB�"�.k+�X芺%��a���5� Characteristics AIM: To Test the V-I characteristics of S.C.R. %�쏢 TRIAC Characteristics Typical V-I characteristics of a triac are shown in figure. b) Start pumps 1 and 2, and increase the speed until the pumps are operating at 60 rev/sec. Output characteristics The base current I B is kept constant (eg. Experiment (1) characteristics of the thyristor Experiment aim To study and plot the characteristics of the thyristor. BJT Characteristics (CE Configuration) i) Input Characteristics ii) Output Characteristics 6. DATE NAME OF THE EXPERIMENT SIGNATURE REMARKS 1 Gate Pulse Generation using R, RC and UJT 2 Characteristics of SCR 3 Characteristics of Triac 4 Characteristics of MOSFET and IGBT 5 AC to DC half controlled converter 6 AC to DC fully controlled Converter 7 Step down and step up MOSFET based choppers 8 IGBT based single phase PWM inverter The TRIAC is 5 layer, 3 terminal Power semiconductor device. By keeping the base current (I B) constant, collector- emitter (V CE) voltage is varied and the corresponding I C values are obtained. 05-09 3 Controlled HWR and FWR using RC triggering circuit 10-14 4 UJT firing circuit for HWR and FWR circuits 15-20 5 Generation of firing signals for thyristors/ trials using digital circuits / microprocessor. Do you know how RFID wallets work and how to make one yourself? LAB SUBJECT CODE: BT 2001 NAME OF DEPARTMENT: Engg. 2. Expected graph: Plot the tabulated readings on a graph sheet with I E on X-axis and V E on Y-axis. 0000089174 00000 n ... if provided for this experiment. Apparatus:-Experimental kit and patch cords. The triac can be operated with either positive or negative gate control voltage but in normal operation usually the gate voltage is positive in … (6.3). >> 0000000973 00000 n 0000503880 00000 n 0000371364 00000 n 0000373605 00000 n 21. In this blog post , we can see VI Characteristics of TRIAC, this post contains circuit diagram and model graphs for VI Characteristics of TRIAC Procedure Experiment Steps Connections are made as shown in the circuit <> 8.2. 0000491583 00000 n and determine the Break over voltage, on state resistance Holding current. 0000299407 00000 n _____ 5.3 Measure the voltage across R6. MOSFET Characteristics 15 4. It can be triggered by reaching its breakover voltage (+ or -). 0000015518 00000 n b) Start pumps 1 and 2, and increase the speed until the pumps are operating at 60 rev/sec. %%EOF 6.3.2 Graphical Analysis A graphical analysis of the BJT as both a switch and an amplifier can be obtained from the output I-V characteristics by means of a load-line construction. Two continuously variable overload & short circuit protected DC regulated power supplies of 0-3v for Gate Current and 0-30v for MT1 & MT2 are 20µA) by adjusting the rheostat Rh 1. 94 0 obj In this experiment, you measured the characteristics of a typical NPN Transistor-an MPSA20. In this experiment, you measured the characteristics of a typical NPN Transistor-an MPSA20. Notice from the I-V characteristics that the output collector current is controlled by the input base current as modeled in Equation. Start taking readings by pressing [Read] button over different temperature values. 2.5V-45V 1.5V-AGMRCET DEPT OF E&C Tabular Column: V1 = V DS2 =15V or 12V V GS V I DS (mA) 0V 8V(Max) (b) Drain Characteristics… POWER ELECTRONICS LAB Department Of Electrical And Electronics Engineering ... Experiment- 1 1. Study the front panel carefully and observe the buttons on the screen. Repeat the above experiment for different values of VDS2 = 15V. Physics LAB SUBJECT CODE: BT 2001 NAME OF DEPARTMENT: Engg. 7-15 3 Controlled HWR & FWR using RC Triggering circuit. 0000015657 00000 n Increase in V BB1 increases the value of peak and valley voltages. Theory: An TRIAC is a device which can be turned on through the gate pulse for both positive and negative values of V 0 <> *TRIAC’s have very small switching frequencies. Power electronic trainer 2. iv List of Experiments Exp No Experiment Nmae Page No 1 Static characteristics of SCR and DIAC. Show your calculations for voltage with firing angle in reading 3 Show your calculations for voltage with firing angle in reading 7 Sketch the variation of output voltage with firing angle. ?��t��s���FV1���Y[Z,��I���g2�NI|w��^w&��U��&ut�&ut�OW���E��Y�lQ>�Ѯ%����˧7��C�Oo��_���-�~��.�'���E���EӮ�#��GE����x��F�+V�-6魆�>��3I�GEN�]�� iv List of Experiments Exp No Experiment Nmae Page No 1 Static characteristics of SCR and DIAC. Plot the tabulated readings on a graph sheet with I E on X-axis and V E on Y-axis. Table 1. 0000015723 00000 n ��(�) ы�} Dual channel Oscilloscope 3. Lab 3 Appendices: Data sheets and Curve Tracer operation. Characteristics of CE Transistor 4. 6. Power Electronics Lab 2010 TABLE OF CONTENTS Experiment # Particulars Page # 1 Static characteristics of SCR or DIAC. 0000091415 00000 n V BO is the maximum forward or reverse voltage that the triac can tolerate before it breaks over into uncontrolled conduction. Two AVO meter 4. This is CE. V BO is the maximum forward or reverse voltage that the triac can tolerate before it breaks over into uncontrolled conduction. Measure the voltage across R6 and across the triac, respectively. Physics Page 1 of 8 EXPERIMENT: DIODE & ZENER DIODE Objective:- To study the forward and reverse bias characteristics of Characteristics of TRIAC The V-I characteristics of TRIAC are discussed below The triac is designed with two SCRs which are fabricated in the opposite direction in a crystal. Experiment No: 1 Experiment Name: Study of V- I Characteristics of SCR. 6. Our webiste has thousands of circuits, projects and other information you that will find interesting. The V-I characteristics for triac in the Ist and IIIrd quadrants are essentially identical to those of an SCR in the Ist quadrant. Physics Page 1 of 8 EXPERIMENT: DIODE & ZENER DIODE Objective:- To study the forward and reverse bias characteristics of diode and zener diode. trailer 2. EXPERIMENT TITLE MODULE NO. Sketch Characteristics of TRIAC No 1. Experiment No. Symbol Symbol Name Units E electric field V / cm 16-19 4 20 AC- voltage controller by using TRIAC-DIAC combination.-22 5 UJT firing circuit for HWR & FWR. xref You compiled your data and plotted the points on a graph to form a “family” of characteristic curves To get your data, you first set the base current on a specific value, and then varied V … ���%�} �5��e ���Yއ�"f ���WC�&�we�޹-�dcku�ͥ%���u0Q�:�*��赯���%����5�����ҨYܮF��WԬn"Z�5��~����8 �^Kfg�+4;k�}ϒ���Y��>KE9��i -�튠%b[�W-f-k5e�"���%�i -�FҚ¶?�bi 2 �%�W4-� �%s�ѱdW�,�ꎢ坩�k1�XҐZr-!��z��c_�8��0ڶ�K�,��ZC�&��ۊ�5��Bk�!��ZC�+�� Power Electronics Lab Manual VII Sem EC EXPERIMENT-1(a) V-I CHARACTERISTICS OF SCR AIM: 1. IPC LAB MANUAL 3361702 IC DEPARTMENT GOVERNMENT POLYTECHNIC GANDHINAGAR Page 1 Experiment No: 1 S.C.R. �$x����H7��d'JR�v�}F���'H$�H]'��B��"W�8�'�P5 �kV��iYXq��@?|ZY�]�ykob��}����k,�!p��9=�p� k��-��)4P�������@����˚BE�*l�%M��bME�ŗ5��5��_�(�T�`�/i Inference: There is a negative resistance region from peak point to valley point. 91 0 obj POWER ELECTRONICS LAB MANUAL (NEE-551) DEPARTMENT OF ELECTRICAL & ELECTRONICS ENGINEERING 27, Knowledge Park-III, Greater Noida, (U.P.) Experiment procedure 1. Power electronic trainer 2. Lab 3 Appendices: Data sheets and Curve Tracer operation. x��}ۮf�q��(��Ď���y>do%���`�(���=��H��H���J#R�����F.���I�~�t����$��?��Zݫ�����{��W��o݃���^�������;?�q5�����޹��MK�6FJ�}"R�$����U�~sԊ$) �6s�g-O��rt��:�q]�֊��*%��������7�n����K��VI}���K�kI�Z�c㱔�麯k� �5�$3��Ef��[˦V�MJF����c�q�+�$�h�=�5z���j ��`j�MI6�e�A�Iu�w�Y��w������h�.�k?k�X��[w��E[��]25?�jK�"�e-�5���}�i���0��f��>��ۚ/���vI%���Ҳ��RU��k��uI�����Z��nޛZm��.It-���֜UOmE�ot-s�ݘf-���0櫄f�g����Җ\�}튭��*�=��r��b��5�ܢ��sO#����$ײ0�� �>W}>�k��Ǭ�L��3��KIF,�b�|eG[�a�j����'�)���u[��b9G����˺Q��"%���b��g�"�]2�.�y��럽}z��AI����y��'7_x�������>|�敯��r���_�ʫ���/~�߸?�y�K���ꗆ�����W����Q���������ʿ��7�}��w��/�����y���o�O��'��?�}�5����c����w�7���y���-�ኯ�w��w��O�7���O���k�_}S)x�z��T���T���- r�?d� ��� q9&�r4L%�a�x�\�I�\�XQ01��ab.��$\���S���r,L��!Cab.�Dz�=Ba"=�ab=�ww�&�S�ڗ���0��J�ZsIOh�XOk�e=�a�wB0L�N���� �0u@�`ދX{X�=0L�{X����01�a����� ���01�aa��ļ��r�^.Xg,�{h�XO댅������ YO`�HO�b�aIOh�XO k�e=�ab=9�5�������Xk.� �)a���'0Lt���#�0�y�����D0L��k_�\����p9&�r0L�#�˱01�����N\����s9&�r4L�#��?����9f̌�%��B^��T�����,�`YC�&Z�� TRIAC Characteristics 93. Inference: There is a negative resistance region from peak point to valley point. Readings taken at 10 nm intervals are sufficient to outline an absorbance spectrum except perhaps at absorbance peaks where additional points may be required to characterize the curve more completely. ; V DRM is the maximum repetitive peak voltage (usually the maximum peak voltage of the applied AC wave) that can be reliably tolerated. ��H>��} 01-04 2 Static characteristics of MOSFET and IGBT. To plot the input and transfer3. To plot the It is a bidirectional device, means it can conduct current in both the directions. 93 0 obj Apparatus 1. IGBT Characteristics 17 5. Rheostat – Working, Construction, Types & Uses, RFID Reader and Tag – Ultimate Guide on RFID Module, Instantaneous on-state voltage – 1.5 Volts. The gate-triggering circuits for the triac are almost same like those used for SCRs. 0000015249 00000 n CIRCUIT DIAGRAM: Fig 1.1(a) Circuit diagram for VI characteristics of SCR. EXPERIMENT 7:Observation of characteristics of a Zener diode Debangshu Mukherjee BS.c Physics,1st Year Chennai Mathematical Institute 7.11.2008 1 Aim of experiment In this experiment, we try to observe the relation between This may lead to damage of the UJT. I am aware that as a member of the academic community it is my responsibility to turn in all suspected violators of the honor code. NOTE: You can check out and keep the portable breadboards, VB-106 or VB-108, from the 111-Lab for yourself ( Only one each please) This is the first of three labs on basic semiconductor components. 24. Press Esc to cancel. It has a pair of phase controlled SCRs connected in inverse parallel manner on the same chip. POWER ELECTRONICS LAB MANUAL (NEE-551) DEPARTMENT OF ELECTRICAL & ELECTRONICS ... To study V-I characteristics of SCR and measure latching and holding currents. Aim: To study the V-I characteristics of SCR. 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